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SiC/GaN/Third-Generation Semiconductor Ion Implanter Series
iKing 200-6/iKing 200-8/iKing 200HT-6/iKing 200HT-8 Series
iKing 200-6/iKing 200-8 ion implanters with a singly charged ion energy of 200 keV; featuring a DC electrostatic accelerator, horizontal current scanning system, and advanced long-life IHC ion source + evaporator, with P+ implantation current up to 15 mA
iKing 360-6/iKing 360-8/iKing 360HT-6/iKing 360HT-8 Series
iKing 360-6/iKing 360-8 ion implanters with a singly charged ion energy of 360 keV; featuring a DC electrostatic accelerator, horizontal current scanning system, and advanced long-life IHC ion source + evaporator, with Al+ implantation current up to 1.5 mA
Product Consultation
SiC/GaN/Third-Generation Semiconductor Ion Implanter Series


