iStellar-HE2000
High-energy ion implanters with a singly charged ion energy of 500 keV; covering advanced process nodes such as 28 nm/22 nm; ideal for logic, memory, and power device applications in the IC sector due to their high reliability and low cost

iKing HE/UHE
Ultra-high energy ion implanters with a singly charged ion energy of 1.5 MeV/2.5 MeV, applied to logic and memory chips, power devices, and more; configurable with different energy levels to meet various customer requirements; featuring high efficiency and reliability, high-precision implantation control, high-current uniformity, low metal contamination, and low particulate contamination